Signals in non-irradiated and irradiated single-sided silicon detectors
نویسندگان
چکیده
منابع مشابه
The Electric Field in Irradiated Silicon Detectors
The electric eld distribution inside heavily irradiated silicon particle detectors is deduced using observations of particle and MIP signals. In these detectors particle signals are observed for both p and n side illumination even when the detector is only partially depleted . The observations indicate that the electric eld distribution within the detector has the contribution expected from a u...
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A model describing the transport of charge carriers generated in silicon detectors (standard planar float zone and MESA diodes) by ionizing particles is presented. The current pulse response induced by and particles in non-irradiated detectors and detectors irradiated up to fluences 3 10 particles/cm is reproduced through this model: i) by adding a small n-type region 15 m deep on the p side fo...
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The charge collection e$ciency (CCE) of silicon detectors, previously irradiated with high neutron #uences, has been measured at 4.2, 77 and 195 K. The CCE recovery measured after 1.2]1014 n/cm2 is 100% at a bias voltage of 50 V. For 2]1015 n/cm2 the most probable signal collected for minimum ionising particles is 13 000 electrons, corresponding to 50% CCE, at a bias voltage of 250 V. Negligibl...
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The leakage current increase of silicon detectors irradiated with fast neutrons was measured in the fluence range from 10 to 10 cm for a wide range of different starting material. The oxygen concentration in the investigated silicon varied from 9×10 cm to below 2×10 cm and the carbon concentration from 2×10 cm to below 5×10 cm. Furthermore the resistivity differed from 100 Ωcm to 20 KΩcm for th...
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ژورنال
عنوان ژورنال: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
سال: 2001
ISSN: 0168-9002
DOI: 10.1016/s0168-9002(00)00776-2